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RBA250N04AHPF-4UA01#GB0 Image

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Mfr. #:
RBA250N04AHPF-4UA01#GB0
Mfr.:
Renesas / IDT
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 250mA
Power (Pd) 348W; 1.8W
On-resistance (RDS(on)@Vgs,Id) 0.85mΩ@125A,10V
Threshold Voltage (Vgs(th)@Id) 4V@250uA
Gate Charge (Qg@Vgs) 368nC@10V
Input Capacitance (Ciss@Vds) 19.35nF@25V
Operating Temperature 175℃
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