LOGO
LOGO
N0600N-S17-AY Image

img for reference only

Mfr. #:
N0600N-S17-AY
Mfr.:
Renesas / IDT
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain-Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 30A
Power (Pd) 2W; 20W
On-resistance (RDS(on)@Vgs,Id) 36mΩ@15A,4.5V
Threshold Voltage (Vgs(th)@Id) -
Gate Charge (Qg@Vgs) 29.8nC@10V
Input Capacitance (Ciss@Vds) 1.38nF@10V
Operating Temperature 150℃@(Tj)
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd