LOGO
LOGO
RBA250N10CHPF-4UA02#GB0 Image

img for reference only

Mfr. #:
RBA250N10CHPF-4UA02#GB0
Mfr.:
Renesas / IDT
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 250mA
Power (Pd) 348W; 1.8W
On-resistance (RDS(on)@Vgs,Id) 2.4mΩ@125A,10V
Threshold Voltage (Vgs(th)@Id) 3.8V@250uA
Gate Charge (Qg@Vgs) 190nC@10V
Input Capacitance (Ciss@Vds) 9.5nF@50V
Operating Temperature 175℃
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd