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NP100P04PDG-E1-AY Image

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Mfr. #:
NP100P04PDG-E1-AY
Mfr.:
Renesas / IDT
Batch:
23+
Description:
Datasheet:
In Stock:
17
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain-Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 100A
Power (Pd) 1.8W; 200W
On-Resistance (RDS(on)@Vgs,Id) 3.5mΩ@10V,50A
Threshold Voltage (Vgs(th)@Id) 2.5V@1mA
Gate Charge (Qg@Vgs) 320nC@10V
Input Capacitance (Ciss@Vds) 15.1nF@10V
Operating Temperature 175℃@(Tj)
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