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RJP65T43DPM-00#T1 Image

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Mfr. #:
RJP65T43DPM-00#T1
Mfr.:
Renesas / IDT
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Collector-Emitter Breakdown Voltage (Vces) 650V
Collector Current (Ic) 40A
Power (Pd) 68.8W
Gate Threshold Voltage (Vge(th)@Ic) 2.4V@15V,20A
Gate Charge (Qg@Ic,Vge) 70nC
Input Capacitance (Cies@Vce) -
Turn-On Delay Time (Td(on)) 30ns
Turn-Off Delay Time (Td(off)) 107ns
Conduction Loss (Eon) 0.17mJ
Turn-Off Loss (Eoff) 0.11mJ
Operating Temperature -
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